• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD=2.2Vto 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board 12 serial presence-detect (SPD) EEPROM
• 8 intemal banks; 2 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23″ (3125mm)
• RoHS Compliant and Halogen-Free
Overview
This advanced memory module features a typical power supply of VDD and VDDQ at 1.2V, with VPP at 2.5V and VDDSPD ranging from 2.2V to 3.6V. It includes nominal and dynamic on-die termination for improved signal integrity, low-power auto self-refresh capabilities, and data bus inversion for optimized data transfer. With 12 internal banks in a single rank and support for both fixed burst chop (BC) of 4 and burst length (BL) of 8, the module allows for on-the-fly selection through the mode register set. Designed with a fly-by topology and a terminated control bus, it features a compact PCB height of 1.23″ (3125mm) and meets RoHS and halogen-free standards, making it an ideal choice for high-performance, energy-efficient applications.
